Manufacturer Part Number
MRFE6VP6300HR5
Manufacturer
NXP Semiconductors
Introduction
High-power RF LDMOS transistor for radio frequency and microwave applications
Product Features and Performance
300W output power
5dB gain
230MHz operating frequency
130V rated voltage
100mA test current
Dual configuration
Product Advantages
High power handling capability
Excellent gain and efficiency
Suitable for various RF and microwave applications
Key Technical Parameters
Power Output: 300W
Gain: 26.5dB
Voltage Rated: 130V
Current Test: 100mA
Frequency: 230MHz
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for chassis mount applications
Application Areas
Radio frequency (RF) amplifiers
Microwave amplifiers
Broadcast transmitters
Telecommunications equipment
Product Lifecycle
This product is an active and widely available component
Replacement or upgrade options may be available from the manufacturer or other suppliers
Key Reasons to Choose This Product
High power output capability
Excellent gain and efficiency performance
Suitable for a wide range of RF and microwave applications
Reliable and RoHS3 compliant design
Readily available and actively supported by the manufacturer