Manufacturer Part Number
MRFE6VP61K25HR5
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF power transistor for 230 MHz applications
Product Features and Performance
1250W output power
24dB gain
Operates at 230 MHz
Supports 133V rated voltage
100mA test current
Product Advantages
Excellent power density and efficiency
Robust and reliable performance
Suitable for high-power RF amplifier designs
Key Technical Parameters
LDMOS technology
1250W output power
24dB gain
133V rated voltage
100mA test current
230MHz operating frequency
Quality and Safety Features
RoHS3 compliant
NI-1230 package
Compatibility
Chassis mount design
Application Areas
High-power RF amplifiers
Broadcast transmitters
Industrial RF applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-power output of 1250W
Excellent gain of 24dB
Reliable LDMOS technology
Suitable for 230 MHz applications
RoHS3 compliance for environmental safety
Robust NI-1230 package design
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