Manufacturer Part Number
MRFE6VP5300NR1
Manufacturer
NXP Semiconductors
Introduction
The MRFE6VP5300NR1 is a high-performance, high-power LDMOS transistor designed for use in radio frequency (RF) power amplifier applications.
Product Features and Performance
Operates in the frequency range of 1.8MHz to 600MHz
Delivers a power output of 300W
Achieves a gain of 27dB
Rated for a maximum voltage of 133V
Tested at a current of 100mA and voltage of 50V
Product Advantages
Excellent power efficiency and thermal performance
Robust design for reliable operation
Suitable for a wide range of RF power amplifier applications
Key Technical Parameters
Transistor Technology: LDMOS
Package: TO-270AB
Mounting Type: Surface Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufacturer's packaging: TO-270 WB-4
Supplier Device Package: TO-270 WB-4
Packaging: Tape & Reel (TR)
Compatibility
Dual configuration
Application Areas
Suitable for use in RF power amplifiers across a variety of industries, such as telecommunications, broadcasting, and industrial applications.
Product Lifecycle
Current product offering, not nearing discontinuation
Replacement and upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power output of 300W
Wide operating frequency range of 1.8MHz to 600MHz
Excellent power efficiency and thermal performance
Robust and reliable design
Compatibility with surface mount technology
RoHS3 compliance for environmental responsibility
