MRFE6VP5300NR1 - NXP USA Inc.

Manufacturer Part Number

MRFE6VP5300NR1

Manufacturer

NXP Semiconductors

Introduction

The MRFE6VP5300NR1 is a high-performance, high-power LDMOS transistor designed for use in radio frequency (RF) power amplifier applications.

Product Features and Performance

Operates in the frequency range of 1.8MHz to 600MHz

Delivers a power output of 300W

Achieves a gain of 27dB

Rated for a maximum voltage of 133V

Tested at a current of 100mA and voltage of 50V

Product Advantages

Excellent power efficiency and thermal performance

Robust design for reliable operation

Suitable for a wide range of RF power amplifier applications

Key Technical Parameters

Transistor Technology: LDMOS

Package: TO-270AB

Mounting Type: Surface Mount

RoHS Compliance: RoHS3 Compliant

Quality and Safety Features

Manufacturer's packaging: TO-270 WB-4

Supplier Device Package: TO-270 WB-4

Packaging: Tape & Reel (TR)

Compatibility

Dual configuration

Application Areas

Suitable for use in RF power amplifiers across a variety of industries, such as telecommunications, broadcasting, and industrial applications.

Product Lifecycle

Current product offering, not nearing discontinuation

Replacement and upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

High power output of 300W

Wide operating frequency range of 1.8MHz to 600MHz

Excellent power efficiency and thermal performance

Robust and reliable design

Compatibility with surface mount technology

RoHS3 compliance for environmental responsibility