MRFE6VP100HR5 - NXP USA Inc.

Manufacturer Part Number

MRFE6VP100HR5

Manufacturer

NXP Semiconductors

Introduction

The MRFE6VP100HR5 is a high-performance radio frequency (RF) power MOSFET from NXP Semiconductors, designed for use in a variety of high-frequency applications.

Product Features and Performance

High power output of 100W

Operates at a frequency of 512MHz

Provides a gain of 26dB

Capable of handling a rated voltage of 133V and a test voltage of 50V

Test current of 100mA

Product Advantages

Robust and reliable performance

Efficient power delivery

Suitable for a wide range of RF applications

Compliant with RoHS3 standards

Key Technical Parameters

Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)

Mounting Type: Chassis Mount

Package: NI-780-4, Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant, ensuring environmental responsibility

Rigorous quality control and testing procedures

Compatibility

Designed for use in a variety of high-frequency applications, such as RF power amplifiers, transmitters, and other RF-based systems.

Application Areas

Telecommunications

Broadcasting

Industrial RF applications

Military and defense systems

Product Lifecycle

Currently available, with no indication of discontinuation

Replacement or upgrade options may be available from NXP Semiconductors or other manufacturers

Key Reasons to Choose This Product

High-power output capability

Excellent RF performance at 512MHz

Robust and reliable LDMOS technology

RoHS3 compliance for environmental sustainability

Compatibility with a wide range of RF applications

Availability and potential for replacement or upgrade options