Manufacturer Part Number
MRFE6S9205HSR3
Manufacturer
NXP Semiconductors
Introduction
This is a high-performance RF MOSFET transistor designed for use in various wireless communication applications.
Product Features and Performance
58W output power
2dB gain
Operates at 880MHz frequency
66V rated voltage, 28V test voltage
4A test current
LDMOS technology
Surface mount packaging
Product Advantages
High power and efficiency
Reliable performance at high frequencies
Compact surface mount design
RoHS3 compliant
Key Technical Parameters
Power Output: 58W
Current (Test): 1.4A
Voltage (Rated): 66V
Voltage (Test): 28V
Gain: 21.2dB
Frequency: 880MHz
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Reliable NI-880S packaging
Compatibility
This RF MOSFET transistor is compatible with various wireless communication systems and applications.
Application Areas
Wireless base stations
RF power amplifiers
Cellular infrastructure
Broadcast transmitters
Product Lifecycle
This product is currently in production and available for purchase. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High power output and efficiency
Reliable performance at high frequencies
Compact surface mount design
RoHS3 compliance for environmental sustainability
Compatibility with a wide range of wireless communication applications