Manufacturer Part Number
MRFE6VP5150GNR1
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF transistor for wireless communications infrastructure applications
Product Features and Performance
High-power output: 150W
Operates at a frequency of 230MHz
Gain of 26.1dB
Voltage-rated at 133V
Current-rated at 100mA
Product Advantages
Robust design for reliable performance
Optimized for high-efficiency operation
Suitable for various wireless communication applications
Key Technical Parameters
RF power transistor
LDMOS technology
Dual configuration
TO-270BB package
Surface mount mounting type
Quality and Safety Features
RoHS3 compliant
Reliable performance under harsh conditions
Compatibility
Suitable for use in wireless communications infrastructure equipment
Application Areas
Wireless base stations
Broadcasting transmitters
RF power amplifiers
Product Lifecycle
This product is an active and readily available component
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High-power output and efficient performance
Robust design for reliable operation
Compatibility with various wireless communication applications
Availability and support from a reputable manufacturer
MRFE6S9200HR3NXP USA Inc.FET RF 66V 880MHZ NI-880