Manufacturer Part Number
MRFE6VP61K25HR6
Manufacturer
NXP Semiconductors
Introduction
High power RF MOSFET transistor for cellular base station power amplifier applications
Product Features and Performance
Capable of delivering 1250W output power
Operates at 230MHz frequency
Provides 24dB of gain
Rated for 133V voltage
Tested at 100mA current
Product Advantages
High power handling capability
Excellent RF performance
Robust and reliable design
Suitable for cellular base station applications
Key Technical Parameters
Power Output: 1250W
Current (Test): 100mA
Voltage (Rated): 133V
Gain: 24dB
Voltage (Test): 50V
Frequency: 230MHz
Quality and Safety Features
RoHS3 compliant
Packaged in NI-1230 package
Compatibility
Chassis mount configuration
Dual device configuration
Application Areas
Cellular base station power amplifiers
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power capability for demanding cellular base station applications
Proven RF performance with 24dB of gain
Robust and reliable design for long-term operation
Compatibility with chassis mount configurations
RoHS3 compliance for environmental considerations