MRFE6VP8600HR5 - NXP USA Inc.

Manufacturer Part Number

MRFE6VP8600HR5

Manufacturer

NXP Semiconductors

Introduction

The MRFE6VP8600HR5 is a high-performance, radio frequency (RF) power MOSFET transistor designed for use in wireless infrastructure applications.

Product Features and Performance

High power output of 125W

Excellent gain of 19.3dB

Operates at a frequency of 860MHz

Supports a wide voltage range of up to 130V

Capable of handling a test current of 1.4A

Product Advantages

Efficient and reliable performance

Robust design for demanding applications

Optimized for wireless infrastructure use

Key Technical Parameters

Power Output: 125W

Current (Test): 1.4A

Voltage (Rated): 130V

Gain: 19.3dB

Voltage (Test): 50V

Frequency: 860MHz

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant

Manufacturer's packaging: NI-1230

Compatibility

Compatible with various wireless infrastructure applications

Application Areas

Wireless base stations

Radio frequency amplifiers

Telecommunications equipment

Product Lifecycle

Current product offering, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

High power output and excellent gain performance

Wide operating voltage range and frequency support

Robust design for reliable operation in demanding applications

RoHS3 compliance for environmental considerations

Compatibility with various wireless infrastructure applications