MRFG35003N6AT1 - NXP USA Inc.

Manufacturer Part Number

MRFG35003N6AT1

Manufacturer

NXP Semiconductors

Introduction

This product is a discrete semiconductor device, specifically a transistor using Field-Effect Transistor (FET) technology in the Pseudomorphic High Electron Mobility Transistor (pHEMT) category.

Product Features and Performance

High power output of 450mW

Test current of 180mA

Rated voltage of 8V

Gain of 10dB

Test voltage of 6V

Operating frequency of 3.55GHz

Product Advantages

Compact surface mount package

RoHS3 compliant for environmental sustainability

Tape and reel packaging for efficient manufacturing

Key Technical Parameters

Technology: pHEMT FET

Package: PLD-1.5

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant for restricted use of hazardous substances

Compatibility

Compatible with PLD-1.5 package and surface mount assembly

Application Areas

Suitable for use in RF and wireless communication applications

Product Lifecycle

This product is an active and currently available offering from NXP Semiconductors.

Several Key Reasons to Choose This Product

High power output of 450mW enables efficient RF signal amplification

Compact surface mount package allows for space-saving design

RoHS3 compliance ensures environmental responsibility

Tape and reel packaging facilitates automated manufacturing