MRFE6VS25LR5 - NXP USA Inc.

Manufacturer Part Number

MRFE6VS25LR5

Manufacturer

NXP Semiconductors

Introduction

This is a high-power RF MOSFET transistor from NXP Semiconductors, designed for use in a variety of RF and microwave applications.

Product Features and Performance

25W output power

9dB of gain at 512MHz

Operates at up to 133V

Suitable for chassis mount applications

Product Advantages

Efficient and reliable performance

Robust LDMOS technology

Compact NI-360 packaging

Key Technical Parameters

Power Output: 25W

Test Current: 10mA

Rated Voltage: 133V

Gain: 25.9dB

Test Voltage: 50V

Frequency: 512MHz

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant

Reliable NXP manufacturing

Compatibility

This transistor is suitable for use in a variety of RF and microwave applications, including power amplifiers, transmitters, and other high-power RF equipment.

Application Areas

Radio frequency (RF) power amplifiers

Microwave communications systems

Broadcast transmitters

Industrial and scientific equipment

Product Lifecycle

The MRFE6VS25LR5 is an active and readily available product from NXP Semiconductors. There are no plans for discontinuation, and suitable replacement or upgrade options may be available if needed.

Key Reasons to Choose This Product

Reliable and efficient LDMOS technology for high-power RF performance

Compact NI-360 packaging suitable for chassis mount applications

RoHS3 compliance for environmental responsibility

Robust design and manufacturing quality from NXP Semiconductors

Broad compatibility and suitability for a range of RF and microwave applications