MRFE6VS25GNR1 - Freescale Semiconductor

Manufacturer Part Number

MRFE6VS25GNR1

Manufacturer

Freescale Semiconductor, Inc. (NXP Semiconductors)

Introduction

High-performance radio frequency (RF) MOSFET transistor

Designed for use in high-power RF amplifier applications

Product Features and Performance

High power output of 25W

Operates at a frequency of 512MHz

Provides a gain of 25.4dB

Rated voltage of 133V

Test voltage of 50V

Test current of 10mA

Surface mount packaging for easy integration

Product Advantages

Excellent power handling capabilities

High frequency performance

Compact surface mount design

Key Technical Parameters

Technology: LDMOS

Package: TO-270BA

Supplier Device Package: TO-270-2 GULL

Manufacturer's packaging: TO-270-2 GULL

Mounting Type: Surface Mount

Quality and Safety Features

Reliable LDMOS transistor technology

Robust TO-270 package design

Compatibility

Suitable for use in high-power RF amplifier circuits

Application Areas

Cellular base stations

Broadcast transmitters

Industrial RF power amplifiers

Military and aerospace communications

Product Lifecycle

Current production model

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

High power output capability

Excellent high-frequency performance

Compact and easy to integrate surface mount design

Proven LDMOS transistor technology for reliability

Widely used in various high-power RF amplifier applications