MRFE6VS25GNR1 - NXP USA Inc.

Manufacturer Part Number

MRFE6VS25GNR1

Manufacturer

NXP Semiconductors

Introduction

The MRFE6VS25GNR1 is a high-performance radio frequency (RF) power MOSFET transistor designed for use in various wireless communication applications.

Product Features and Performance

25W output power

High-frequency operation up to 512MHz

4dB gain

Suitable for surface mount technology (SMT) assembly

Robust LDMOS technology

Product Advantages

Efficient and reliable RF power amplification

Excellent high-frequency performance

Compact and easy to integrate design

Suitable for a wide range of wireless applications

Key Technical Parameters

Power Output: 25W

Current (Test): 10mA

Voltage (Rated): 133V

Voltage (Test): 50V

Frequency: 512MHz

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

The MRFE6VS25GNR1 is compatible with various RF communication systems and can be used in a wide range of wireless applications.

Application Areas

Wireless base stations

Wireless infrastructure equipment

Broadcast transmitters

Radar systems

Industrial RF power applications

Product Lifecycle

The MRFE6VS25GNR1 is an active product, with no known plans for discontinuation. Replacement or upgrade options may be available from NXP Semiconductors.

Key Reasons to Choose This Product

Efficient and high-performance RF power amplification

Excellent high-frequency operation up to 512MHz

Compact and easy to integrate design

Reliable and durable construction

Compatibility with a wide range of wireless applications