Manufacturer Part Number
MRFG35010ANT1
Manufacturer
NXP Semiconductors
Introduction
RF power transistor for wireless infrastructure applications
Product Features and Performance
High power output of 9W
High gain of 10dB
Operates at 3.55GHz frequency
130mA test current
15V rated voltage
12V test voltage
Surface mount technology
Product Advantages
Robust and reliable performance
Optimized for wireless infrastructure applications
Space-saving surface mount design
Key Technical Parameters
Power output: 9W
Gain: 10dB
Frequency: 3.55GHz
Current: 130mA
Voltage: 15V (rated), 12V (test)
Mounting type: Surface mount
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: PLD-1.5
Compatibility
Compatible with a wide range of wireless infrastructure equipment
Application Areas
Wireless base stations
Radio frequency (RF) power amplifiers
Wireless communication systems
Product Lifecycle
This product is currently in production and available for purchase
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
High power output and gain for efficient wireless performance
Reliable and robust design for demanding infrastructure applications
Space-saving surface mount package for easier integration
RoHS3 compliance for environmentally-conscious design
Backed by the expertise and quality of NXP Semiconductors
MRFF002G3K00-01R