Manufacturer Part Number
MRFE6VP61K25HSR5
Manufacturer
NXP Semiconductors
Introduction
The MRFE6VP61K25HSR5 is a high-performance RF power MOSFET transistor designed for use in a wide range of RF power amplifier applications.
Product Features and Performance
High power output of 1250W
Excellent gain of 24dB
Wide operating frequency range up to 230MHz
Capable of handling high voltage up to 133V
Efficient LDMOS technology
Product Advantages
Reliable and robust construction
Optimized for high-power RF applications
Proven performance and reliability
Supports demanding operating conditions
Key Technical Parameters
Power Output: 1250W
Current (Test): 100mA
Voltage (Rated): 133V
Gain: 24dB
Voltage (Test): 50V
Frequency: 230MHz
Quality and Safety Features
RoHS3 compliant
Packaged in NI-1230-4S surface mount package
Compatibility
Suitable for use in a wide range of RF power amplifier applications
Application Areas
Broadcast equipment
Telecommunications infrastructure
Industrial RF power applications
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High power output and efficiency
Excellent gain and wide frequency range
Reliable and robust LDMOS technology
Proven performance and quality