MRFE6VP61K25HSR5 - NXP USA Inc.

Manufacturer Part Number

MRFE6VP61K25HSR5

Manufacturer

NXP Semiconductors

Introduction

The MRFE6VP61K25HSR5 is a high-performance RF power MOSFET transistor designed for use in a wide range of RF power amplifier applications.

Product Features and Performance

High power output of 1250W

Excellent gain of 24dB

Wide operating frequency range up to 230MHz

Capable of handling high voltage up to 133V

Efficient LDMOS technology

Product Advantages

Reliable and robust construction

Optimized for high-power RF applications

Proven performance and reliability

Supports demanding operating conditions

Key Technical Parameters

Power Output: 1250W

Current (Test): 100mA

Voltage (Rated): 133V

Gain: 24dB

Voltage (Test): 50V

Frequency: 230MHz

Quality and Safety Features

RoHS3 compliant

Packaged in NI-1230-4S surface mount package

Compatibility

Suitable for use in a wide range of RF power amplifier applications

Application Areas

Broadcast equipment

Telecommunications infrastructure

Industrial RF power applications

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

High power output and efficiency

Excellent gain and wide frequency range

Reliable and robust LDMOS technology

Proven performance and quality