Manufacturer Part Number
MRFE6VP5600HR5
Manufacturer
NXP Semiconductors
Introduction
High-power RF MOSFET transistor for use in industrial, scientific and medical (ISM) applications
Product Features and Performance
Delivers up to 600W of output power at 230MHz
Features 25dB of power gain
Operates at a supply voltage of up to 130V
100mA test current at 50V
Product Advantages
Robust LDMOS technology for reliable and efficient performance
Suitable for a wide range of industrial, scientific and medical applications
Key Technical Parameters
Power Output: 600W
Current (Test): 100mA
Voltage (Rated): 130V
Gain: 25dB
Voltage (Test): 50V
Frequency: 230MHz
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Packaged in NI-1230-4H (Tape & Reel)
Application Areas
Suitable for use in industrial, scientific and medical (ISM) RF power applications
Product Lifecycle
This is an active product, with no indication of discontinuation
Key Reasons to Choose This Product
High-power output of 600W at 230MHz
Excellent power gain of 25dB
Robust LDMOS technology for reliable performance
Suitable for a wide range of industrial, scientific and medical applications
RoHS3 compliant for environmental responsibility
