Manufacturer Part Number
MRFE6VP5150NR1
Manufacturer
NXP Semiconductors
Introduction
High-power RF MOSFET transistor for high-frequency applications
Product Features and Performance
High-power and high-efficiency RF MOSFET design
Operates at frequencies up to 230 MHz
Capable of delivering up to 150W of output power
Typical power gain of 26.1 dB
Low noise and distortion performance
Stable operation under various load conditions
Product Advantages
Robust and reliable design for demanding applications
Suitable for high-power RF amplifier and transmitter circuits
Efficient power conversion for improved system performance
Proven technology for consistent and predictable operation
Key Technical Parameters
Power Output: 150W
Operating Frequency: 230 MHz
Voltage Rating: 133V
Current Rating: 100mA
Power Gain: 26.1 dB
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Tested and certified for safety and compliance
Compatibility
Suitable for a wide range of high-power RF applications
Can be used in various RF amplifier and transmitter designs
Application Areas
Wireless base stations
Broadcast transmitters
Industrial RF heating and welding
Amateur radio equipment
Military and defense communications
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Proven high-power and high-efficiency performance
Reliable and stable operation in demanding applications
Efficient power conversion for improved system performance
Extensive compatibility and versatility
Compliance with relevant safety and environmental standards
