SBC856BLT3G - onsemi

Manufacturer Part Number

SBC856BLT3G

Manufacturer

onsemi

Introduction

This is a PNP bipolar junction transistor (BJT) from onsemi's discrete semiconductor product line. It is designed for use in automotive and other industrial applications.

Product Features and Performance

Operates over a wide temperature range of -55°C to 150°C

Handles up to 300 mW of power

Breakdown voltage of up to 65 V between collector and emitter

Collector current of up to 100 mA

Very low collector cutoff current of 15 nA maximum

Saturation voltage of 650 mV at 5 mA and 100 mA collector current

Minimum current gain of 220 at 2 mA and 5 V

Transition frequency of 100 MHz

Product Advantages

Robust design for use in harsh automotive environments

Wide operating temperature range

High voltage and current handling capabilities

Low saturation voltage for efficient performance

High current gain for sensitive circuit designs

Key Technical Parameters

Package: SOT-23-3 (TO-236)

RoHS compliance: RoHS3

Packaging: Tape and Reel

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant for environmental responsibility

Compatibility

This transistor is compatible with a variety of electronic circuits and systems, particularly those found in automotive and industrial applications.

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Amplifier and switching applications

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Robust automotive-grade design

Wide operating temperature range

High voltage and current capabilities

Low saturation voltage for efficient performance

High current gain for sensitive circuit designs

AEC-Q101 qualification and RoHS3 compliance for quality and safety