Manufacturer Part Number
SBC856BLT1G
Manufacturer
onsemi
Introduction
Small signal PNP bipolar junction transistor (BJT)
Suitable for automotive and industrial applications
Product Features and Performance
High frequency performance up to 100 MHz
Low collector-emitter saturation voltage of 650 mV @ 5 mA, 100 mA
Wide operating temperature range of -55°C to 150°C
Low collector cutoff current of 15 nA
Product Advantages
Robust design for harsh environments
Reliable performance in automotive and industrial applications
Small form factor in SOT-23-3 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 65 V
Collector Current (Max): 100 mA
Power Dissipation (Max): 300 mW
DC Current Gain (hFE): 220 min @ 2 mA, 5 V
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Automotive electronics
Industrial control systems
Consumer electronics
Telecommunications equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available from manufacturer
Key Reasons to Choose
High-performance in a small package
Wide operating temperature range
Reliable operation in harsh environments
Automotive and industrial grade quality
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