SBC856BDW1T1G - onsemi

Manufacturer Part Number

SBC856BDW1T1G

Manufacturer

onsemi

Introduction

Dual PNP bipolar junction transistor (BJT) array in a 6-pin SC-88/SC70-6/SOT-363 surface mount package

Product Features and Performance

Optimized for automotive and industrial applications

Meets AEC-Q101 qualification requirements

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage of 650mV @ 5mA, 100mA

Transition frequency of 100MHz

Collector current (Ic) up to 100mA

Collector-emitter breakdown voltage (VCEO) of 65V

Collector cutoff current (ICBO) of 15nA maximum

Product Advantages

Compact surface mount package

Optimized for high-density circuit designs

Excellent thermal performance

Robust design for harsh environments

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 65V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 15nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Meets AEC-Q101 qualification requirements for automotive applications

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Amplifier and switching circuits

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Optimized for automotive and industrial applications

Meets stringent AEC-Q101 qualification requirements

Wide operating temperature range and excellent thermal performance

Compact surface mount package for high-density designs

Low collector-emitter saturation voltage and high transition frequency

Robust design for harsh environments