Manufacturer Part Number
SBC847BPDXV6T1G
Manufacturer
onsemi
Introduction
The SBC847BPDXV6T1G is a bipolar junction transistor (BJT) array from onsemi, designed for a wide range of applications.
Product Features and Performance
Bipolar junction transistor array
Available in NPN and PNP configurations
High voltage capability up to 45V
High current handling up to 100mA
Low collector-emitter saturation voltage
Wide operating temperature range of -55°C to 150°C
High transition frequency of 100MHz
Excellent DC current gain of 200 or higher
Product Advantages
Compact surface mount package (SOT-563)
Automotive-grade quality (AEC-Q101 qualified)
RoHS3 compliant for environmental friendliness
Tape and reel packaging for efficient manufacturing
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45V
Collector Current (IC): 100mA
Collector Cutoff Current (ICBO): 15nA
DC Current Gain (hFE): 200 or higher
Transition Frequency (fT): 100MHz
Power Dissipation: 357mW
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant for restricted substances
Compatibility
Surface mount SOT-563 package
Compatible with various electronic circuits and systems
Application Areas
Automotive electronics
Industrial and consumer electronics
Power management circuits
Switching and amplifier applications
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Automotive-grade quality and reliability
Wide operating temperature range
High voltage and current capabilities
Compact surface mount package
Excellent electrical performance characteristics
RoHS3 compliance for environmental responsibility