SBC847BLT1G - onsemi

Manufacturer Part Number

SBC847BLT1G

Manufacturer

onsemi

Introduction

The SBC847BLT1G is a discrete NPN bipolar junction transistor (BJT) from onsemi, designed for automotive and industrial applications.

Product Features and Performance

Operates over a wide temperature range of -55°C to 150°C

Provides a maximum collector current of 100 mA

Achieves a minimum DC current gain (hFE) of 200 at 2 mA, 5V

Supports a maximum collector-emitter breakdown voltage of 45V

Offers a transition frequency of up to 100 MHz

Packaged in a compact SOT-23-3 (TO-236) surface mount housing

Product Advantages

Robust design for reliable performance in harsh environments

Compact and space-efficient packaging

Supports high-speed switching and amplification applications

Suitable for a wide range of automotive and industrial use cases

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage (Max): 45V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 15 nA

Collector-Emitter Saturation Voltage (Max): 600 mV @ 5 mA, 100 mA

DC Current Gain (hFE) (Min): 200 @ 2 mA, 5V

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Designed and manufactured to high-quality standards

Compatibility

Compatible with a wide range of electronic circuits and systems requiring a discrete NPN bipolar transistor

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Switching and amplification circuits

General-purpose electronics

Product Lifecycle

Currently in active production

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

Reliable performance in harsh environments

Compact and space-efficient packaging

High-speed switching and amplification capabilities

Suitable for a wide range of automotive and industrial applications

Meets rigorous quality and safety standards