Manufacturer Part Number
SBC846BWT1G
Manufacturer
onsemi
Introduction
The SBC846BWT1G is a high-performance NPN bipolar junction transistor (BJT) designed for automotive and industrial applications.
Product Features and Performance
Rated for high voltage operation up to 65V
Supports collector current up to 100mA
Exhibits low collector-emitter saturation voltage of 600mV @ 5mA, 100mA
Provides high DC current gain of 200 minimum @ 2mA, 5V
Operates at high frequencies up to 100MHz
Product Advantages
Excellent high voltage and high current handling capabilities
Low saturation voltage for efficient operation
High current gain for amplification and switching applications
Suitable for high-frequency circuits
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 65V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Surface mount SC-70, SOT-323 package
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Amplifier and switching circuits
Product Lifecycle
This product is currently in production and widely available.
No known plans for discontinuation, and replacements or upgrades are readily available.
Key Reasons to Choose This Product
Excellent high voltage and high current handling capabilities
Low saturation voltage for efficient operation
High current gain for amplification and switching applications
Suitable for high-frequency circuits
Automotive-grade quality and safety features
Surface mount package compatibility
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