SBC846BDW1T1G - onsemi

Manufacturer Part Number

SBC846BDW1T1G

Manufacturer

onsemi

Introduction

The SBC846BDW1T1G is a dual NPN bipolar junction transistor (BJT) array in a surface mount package suitable for automotive and industrial applications.

Product Features and Performance

Dual NPN transistors in a single package

Low collector-emitter saturation voltage (Vce(sat))

High current gain (hFE)

Wide operating temperature range (-55°C to 150°C)

High collector-emitter breakdown voltage (VCEO)

High frequency operation up to 100MHz

Product Advantages

Compact surface mount package

Automotive-grade AEC-Q101 qualified

Compliant with RoHS3 directive

Reliable performance in harsh environments

Key Technical Parameters

Power Rating: 380mW

Collector-Emitter Breakdown Voltage (VCEO): 65V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 15nA

DC Current Gain (hFE): 200 (min) @ 2mA, 5V

Transition Frequency (fT): 100MHz

Quality and Safety Features

Automotive-grade AEC-Q101 qualified

RoHS3 compliant

Compatibility

This product is suitable for use in a variety of automotive and industrial applications.

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Switching and amplifier circuits

Product Lifecycle

The SBC846BDW1T1G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Reliable performance in harsh environments

High-frequency operation up to 100MHz

Low collector-emitter saturation voltage for improved efficiency

Compact surface mount package for space-constrained designs

Automotive-grade AEC-Q101 qualification for reliability

RoHS3 compliance for environmental sustainability