Manufacturer Part Number
SBC817-25LT3G
Manufacturer
onsemi
Introduction
The SBC817-25LT3G is a single NPN bipolar junction transistor (BJT) from onsemi. It is designed for various automotive and industrial applications.
Product Features and Performance
Operating temperature range of -65°C to 150°C
High collector-emitter breakdown voltage of 45V
High collector current capacity of 500mA
Low collector-base leakage current of 100nA
High DC current gain of 160 minimum
High transition frequency of 100MHz
Product Advantages
Robust design for demanding environments
High reliability and long lifespan
Suitable for a wide range of applications
Small surface mount package for space-constrained designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45V
Collector Current (IC): 500mA
Collector-Base Leakage Current (ICBO): 100nA
DC Current Gain (hFE): Minimum 160
Transition Frequency (fT): 100MHz
Power Dissipation: 300mW
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable performance in harsh environments
Compatibility
Suitable for various surface mount applications
Compatible with standard SMT assembly processes
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplification circuits
Product Lifecycle
The SBC817-25LT3G is an actively supported product.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Robust design for demanding applications
High reliability and long lifespan
Excellent electrical performance characteristics
Small surface mount package for space-constrained designs
AEC-Q101 qualification for automotive use
Wide operating temperature range
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