Manufacturer Part Number
SBC817-25LT1G
Manufacturer
onsemi
Introduction
The SBC817-25LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications, including switching, amplification, and power control.
Product Features and Performance
Operates over a wide temperature range of -65°C to 150°C
Capable of handling up to 500 mA of collector current
Supports a maximum collector-emitter breakdown voltage of 45 V
Offers a high DC current gain (hFE) of 160 or more at 100 mA collector current
Achieves a transition frequency of up to 100 MHz
Provides a low collector-emitter saturation voltage (Vce_sat) of 700 mV at 50 mA and 500 mA collector current
Product Advantages
Robust design and high reliability
Excellent thermal management capabilities
Suitable for a wide range of applications
Compact and space-efficient surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45 V
Collector Current (IC): 500 mA
Collector Cutoff Current (ICBO): 100 nA
DC Current Gain (hFE): 160 or more
Transition Frequency (fT): 100 MHz
Power Dissipation (Ptot): 300 mW
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for a variety of applications, including switching, amplification, and power control in electronic circuits
Application Areas
Automotive electronics
Industrial control systems
Consumer electronics
Telecommunications equipment
Product Lifecycle
This product is actively supported and available for purchase.
Replacement and upgrade options may be available in the future, depending on market demand and technological advancements.
Key Reasons to Choose This Product
Robust and reliable performance across a wide temperature range
High current handling capability and low saturation voltage
Excellent frequency response and high transition frequency
Compact and space-efficient surface-mount package
Automotive-grade quality and RoHS3 compliance
Suitable for a wide range of applications in various industries