SBC808-25LT1G - onsemi

Manufacturer Part Number

SBC808-25LT1G

Manufacturer

onsemi

Introduction

The SBC808-25LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, designed for automotive and industrial applications.

Product Features and Performance

Compact SOT-23-3 (TO-236) surface mount package

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage of 700mV @ 50mA, 500mA

High DC current gain of 160 @ 100mA, 1V

High transition frequency of 100MHz

Maximum collector current of 500mA

Low collector cutoff current of 100nA

Product Advantages

Suitable for automotive and industrial applications

Excellent thermal and electrical performance

Compact and space-efficient packaging

Compliant with RoHS3 directive

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 25V

Collector Current (Max): 500mA

Collector Cutoff Current (Max): 100nA

DC Current Gain (Min): 160 @ 100mA, 1V

Transition Frequency: 100MHz

Power Dissipation (Max): 300mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant

Compatibility

Suitable for use in a wide range of automotive and industrial electronic applications

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Amplifiers

Switches

Product Lifecycle

The SBC808-25LT1G is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Excellent thermal and electrical performance for demanding applications

Compact and space-efficient SOT-23-3 (TO-236) package

AEC-Q101 qualification for automotive use

RoHS3 compliance for environmentally-friendly design

Wide operating temperature range for reliability in harsh environments

High DC current gain and transition frequency for efficient signal amplification