SBC847BDW1T1G - onsemi

Manufacturer Part Number

SBC847BDW1T1G

Manufacturer

onsemi

Introduction

The SBC847BDW1T1G is a dual NPN bipolar junction transistor (BJT) array designed for a wide range of applications.

Product Features and Performance

Operates over a wide temperature range of -55°C to 150°C

Capable of handling up to 380mW of power

Breakdown voltage of up to 45V between collector and emitter

Maximum collector current of 100mA

Low collector cutoff current of 15nA (ICBO)

Saturation voltage (Vce) of 600mV at 5mA/100mA

Transistor current gain (hFE) of at least 200 at 2mA/5V

Transition frequency of 100MHz

Product Advantages

Compact 6-pin SC-88/SC70-6/SOT-363 surface mount package

Suitable for automotive and industrial applications

AEC-Q101 qualified for reliability and quality

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 45V

Collector Current (Max): 100mA

Collector Cutoff Current: 15nA

DC Current Gain: Minimum 200 @ 2mA/5V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Switching and amplification applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose this Product

Wide operating temperature range

Compact and reliable surface mount package

Excellent electrical characteristics for a variety of applications

AEC-Q101 qualified for use in automotive and industrial environments

RoHS3 compliance for environmental responsibility