SBC848BLT1G - onsemi

Manufacturer Part Number

SBC848BLT1G

Manufacturer

onsemi

Introduction

The SBC848BLT1G is a discrete NPN bipolar junction transistor (BJT) that is suitable for use in automotive and industrial applications.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C

Power rating of 300 mW

Collector-emitter breakdown voltage of 30 V

Collector current of up to 100 mA

Collector cut-off current of 15 nA maximum

Collector-emitter saturation voltage of 600 mV at 5 mA and 100 mA

DC current gain of 200 minimum at 2 mA and 5 V

Transition frequency of 100 MHz

Product Advantages

Automotive-grade quality and reliability

Suitable for harsh environmental conditions

Compact surface-mount package

Excellent electrical performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 30 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 15 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V

Frequency Transition: 100 MHz

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualified

Compatibility

Suitable for use in a variety of automotive and industrial applications

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Amplifier and switching circuits

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgraded products may be available in the future, but no specific information is provided.

Several Key Reasons to Choose This Product

Automotive-grade quality and reliability

Wide operating temperature range of -55°C to 150°C

Excellent electrical performance with high current gain and high-frequency capability

Compact surface-mount packaging for efficient board layout

RoHS3 compliance and AEC-Q101 qualification for use in harsh environments