Manufacturer Part Number
SBC857ALT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage
High DC current gain
High transition frequency
Product Advantages
Suitable for automotive and industrial applications
Robust design for harsh environments
Reliable performance
Key Technical Parameters
Package: SOT-23-3 (TO-236)
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 100 mA
Power Max: 300 mW
Transistor Type: PNP
DC Current Gain (hFE) (Min): 125 @ 2mA, 5V
Frequency Transition: 100MHz
Quality and Safety Features
ROHS3 Compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount package for automated assembly
Application Areas
Automotive electronics
Industrial control systems
General-purpose amplifier and switch applications
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose
Robust design for harsh environments
Reliable performance with wide operating temperature range
High frequency and current handling capability
Suitable for automotive and industrial applications
ROHS3 compliant and AEC-Q101 qualified