SBC857BWT1G - onsemi

Manufacturer Part Number

SBC857BWT1G

Manufacturer

onsemi

Introduction

The SBC857BWT1G is a discrete semiconductor product, specifically a single bipolar junction transistor (BJT) in the PNP configuration.

Product Features and Performance

Automotive-grade AEC-Q101 qualified

Operating temperature range of -55°C to 150°C

Power rating of 150 mW

Collector-emitter breakdown voltage up to 45 V

Collector current up to 100 mA

Low collector cutoff current of 15 nA (max)

Saturation voltage of 650 mV @ 5 mA, 100 mA

Current gain (hFE) of 220 (min) @ 2 mA, 5 V

Transition frequency of 100 MHz

Product Advantages

Robust automotive-grade performance

Wide operating temperature range

Low power consumption

High breakdown voltage

High frequency capabilities

Key Technical Parameters

Manufacturer Part Number: SBC857BWT1G

Transistor Type: PNP

Package: SC-70, SOT-323

RoHS Compliance: ROHS3 Compliant

Quality and Safety Features

AEC-Q101 qualification for automotive applications

RoHS3 compliant for environmental safety

Compatibility

Surface mount package (SC-70, SOT-323)

Suitable for a wide range of electronic circuit designs

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

General-purpose amplifier and switching applications

Product Lifecycle

Currently in production

No known discontinuation plans

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Robust automotive-grade performance and reliability

Wide operating temperature range for versatile applications

Low power consumption for energy-efficient designs

High breakdown voltage and frequency capabilities

Small surface mount package for space-constrained designs

RoHS3 compliance for environmentally friendly use