SBC857BLT1G - onsemi

Manufacturer Part Number

SBC857BLT1G

Manufacturer

onsemi

Introduction

The SBC857BLT1G is a single bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, designed for use in automotive and industrial applications.

Product Features and Performance

PNP transistor with high current gain and high switching speed

Operates over a wide temperature range of -55°C to 150°C

Capable of handling up to 100 mA of collector current

Features low collector-emitter saturation voltage of 650 mV at 5 mA, 100 mA

Provides a minimum DC current gain (hFE) of 220 at 2 mA, 5 V

Has a high transition frequency of 100 MHz

Product Advantages

Compact and space-saving SOT-23-3 (TO-236) package

Robust and reliable design suitable for automotive and industrial environments

Excellent thermal management capabilities

High performance and efficiency

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (Max): 100 mA

Collector Cutoff Current: 15 nA

DC Current Gain: Minimum 220 at 2 mA, 5 V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Manufactured in an ISO-certified facility

Compatibility

Suitable for a wide range of automotive and industrial applications

Can be used in power management, switching, and amplification circuits

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Amplifiers and switches

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Reliable and robust design for harsh environments

High-performance characteristics for efficient circuit operation

Compact and space-saving package

Automotive and industrial grade qualification for broad applicability

Availability of replacement and upgrade options from the manufacturer