SBC857BDW1T1G - onsemi

Manufacturer Part Number

SBC857BDW1T1G

Manufacturer

onsemi

Introduction

Dual PNP bipolar junction transistor (BJT) array in a compact SC-88/SC70-6/SOT-363 package.

Product Features and Performance

Operates over a wide temperature range of -55°C to 150°C

High DC current gain (hFE) of 220 minimum at 2mA, 5V

Transition frequency of 100MHz

Low collector-emitter saturation voltage (VCE(sat)) of 650mV maximum at 5mA, 100mA

Low collector cutoff current (ICBO) of 15nA maximum

Product Advantages

Compact SC-88/SC70-6/SOT-363 package

Suitable for automotive and industrial applications

Excellent electrical characteristics

RoHS3 compliant

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 45V

Current Collector (Ic) (Max): 100mA

Power Max: 380mW

Quality and Safety Features

Compliant with AEC-Q101 automotive quality standard

RoHS3 compliant

Compatibility

Compatible with a wide range of electronic circuits and systems.

Application Areas

Automotive electronics

Industrial control systems

General-purpose amplification and switching

Product Lifecycle

This product is an active, ongoing part of onsemi's portfolio. Replacements and upgrades may be available in the future.

Several Key Reasons to Choose This Product

Excellent electrical performance across a wide temperature range

Compact and space-saving package

Automotive and industrial grade quality and reliability

Compatibility with a wide range of applications