Manufacturer Part Number
SBC856ALT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Surface Mount Packaging (SOT-23-3)
Automotive Grade, AEC-Q101 Qualified
Wide Operating Temperature Range: -55°C to 150°C
High Power Rating: 300 mW
High Collector-Emitter Breakdown Voltage: 65 V
High Collector Current Rating: 100 mA
Low Collector Cutoff Current: 15 nA (ICBO)
Low Collector-Emitter Saturation Voltage: 650 mV @ 5 mA, 100 mA
High DC Current Gain (hFE): 125 @ 2 mA, 5 V
High Transition Frequency: 100 MHz
Product Advantages
Robust automotive-grade performance
Compact surface mount package
Wide operating temperature range
High power and voltage handling capabilities
Low saturation voltage for efficient operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 65 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 15 nA
Collector-Emitter Saturation Voltage: 650 mV
DC Current Gain (hFE): 125
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified for Automotive Applications
Compatibility
Can be used in a variety of electronic circuits and applications
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplification circuits
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Robust automotive-grade performance
Wide operating temperature range
High power and voltage handling capabilities
Low saturation voltage for efficient operation
Compact surface mount packaging
AEC-Q101 qualification for reliable operation in harsh environments