SBC847CLT1G - onsemi

Manufacturer Part Number

SBC847CLT1G

Manufacturer

onsemi

Introduction

This is an NPN Bipolar Junction Transistor (BJT) from onsemi, designed for a variety of general-purpose applications.

Product Features and Performance

Optimized for automotive and industrial applications

Supports operating temperature range of -55°C to 150°C

Provides a maximum collector current of 100 mA

Offers a high DC current gain of 420 (min) at 2 mA, 5 V

Achieves a transition frequency of 100 MHz

Product Advantages

Robust and reliable performance under harsh conditions

Compact SOT-23-3 (TO-236) surface-mount package

Compliant with RoHS3 environmental directives

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 45 V

Collector Cutoff Current (Max): 15 nA

Collector-Emitter Saturation Voltage (Max): 600 mV

Quality and Safety Features

Tested and qualified to the AEC-Q101 automotive standard

Manufactured in an IATF 16949-certified facility

Compatibility

This transistor is compatible with various electronic circuits and systems, particularly those in automotive and industrial applications.

Application Areas

Switching and amplification circuits

Automotive electronics

Industrial control systems

General-purpose electronic devices

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Robust and reliable performance in harsh environments

Compact and space-efficient surface-mount package

Compliance with RoHS3 environmental regulations

Automotive-grade quality and safety certification

Broad compatibility with various electronic applications