Manufacturer Part Number
SBC857CLT1G
Manufacturer
onsemi
Introduction
The SBC857CLT1G is a PNP bipolar junction transistor (BJT) from onsemi, designed for automotive and general-purpose applications.
Product Features and Performance
PNP bipolar transistor
High current handling capability up to 100 mA
Low collector-emitter saturation voltage
High current gain of minimum 420 at 2 mA, 5 V
Wide operating temperature range from -55°C to 150°C
High transition frequency of 100 MHz
Product Advantages
Robust automotive-grade design
Efficient power handling
High-speed switching capabilities
Versatile for various applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 45 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 15 nA
Collector-Emitter Saturation Voltage (Max): 650 mV @ 5 mA, 100 mA
Power Dissipation (Max): 300 mW
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable performance in harsh environments
Compatibility
Surface-mount SOT-23-3 (TO-236) package
Suitable for automated assembly processes
Application Areas
Automotive electronics
General-purpose amplifier and switch circuits
Power management systems
Industrial control and automation
Product Lifecycle
Current production part
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose
Robust automotive-grade design for reliable performance
High current handling and efficient power management
Fast switching capabilities for high-speed applications
Wide operating temperature range for versatile use
RoHS3 compliance and AEC-Q101 qualification for quality assurance
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