Manufacturer Part Number
SBCP53-10T1G
Manufacturer
onsemi
Introduction
PNP bipolar junction transistor (BJT) in a TO-261 (SOT-223) surface mount package, designed for automotive and industrial applications.
Product Features and Performance
High power handling capability up to 1.5W
High collector-emitter breakdown voltage up to 80V
High collector current rating up to 1.5A
Low collector-emitter saturation voltage
High current gain (hFE) up to 63
Wide operating temperature range from -65°C to 150°C
AEC-Q101 qualified for automotive applications
Product Advantages
Robust design for reliable operation in harsh environments
Optimized for efficient power switching and amplification
Compact surface mount package for space-constrained designs
Suitable for a wide range of automotive and industrial applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 80V
Collector Current (IC): 1.5A
Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 50mA, 500mA
Current Gain (hFE): 63 @ 150mA, 2V
Transition Frequency (fT): 50MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable performance in harsh environments
Compatibility
Can be used as a replacement or upgrade for similar PNP bipolar transistors in automotive and industrial applications
Application Areas
Power amplifiers
Power switches
Motor control
Automotive electronics
Industrial control systems
Product Lifecycle
Currently in active production
Availability of replacement or upgraded models is ongoing
Key Reasons to Choose This Product
Robust and reliable design for demanding applications
High power handling and voltage capability
Efficient performance for power switching and amplification
Compact surface mount package for space-constrained designs
Proven track record in automotive and industrial applications
AEC-Q101 qualification for automotive-grade reliability