SBCP53T1G - onsemi

Manufacturer Part Number

SBCP53T1G

Manufacturer

onsemi

Introduction

The SBCP53T1G is a PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in automotive and industrial applications.

Product Features and Performance

Operating temperature range of -65°C to 150°C

Maximum power dissipation of 1.5 W

Maximum collector-emitter breakdown voltage of 80 V

Maximum collector current of 1.5 A

Minimum DC current gain (hFE) of 40 @ 150 mA, 2 V

Transition frequency of 50 MHz

Product Advantages

Robust and reliable performance for demanding applications

Compact surface mount packaging (SOT-223)

Compliant with RoHS3 regulations

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80 V

Collector Current (IC): 1.5 A

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 500 mV @ 50 mA, 500 mA

DC Current Gain (hFE): 40 @ 150 mA, 2 V

Transition Frequency (fT): 50 MHz

Quality and Safety Features

Automotive-grade AEC-Q101 qualified

RoHS3 compliant

Compatibility

Suitable for use in various automotive and industrial applications

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Amplifiers

Switching circuits

Product Lifecycle

Current production, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

Robust and reliable performance in harsh environments

Compact and space-saving surface mount package

Compliance with automotive and industrial quality standards

Wide range of applications in various industries