SBCP56-10T1G - onsemi

Manufacturer Part Number

SBCP56-10T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Automotive-grade, AEC-Q101 qualified

Wide operating temperature range: -65°C to 150°C

Maximum power dissipation: 1.5 W

Maximum collector-emitter breakdown voltage: 80 V

Maximum collector current: 1 A

Low collector-emitter saturation voltage: 500 mV @ 50 mA, 500 mA

High DC current gain: 63 min. @ 150 mA, 2 V

High transition frequency: 130 MHz

Product Advantages

Robust automotive-grade design

Excellent thermal performance

High voltage and current handling capabilities

Low saturation voltage for efficient operation

High-speed switching capabilities

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 1 A

Current Collector Cutoff (Max): 100 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 500 mV @ 50 mA, 500 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150 mA, 2 V

Frequency Transition: 130 MHz

Quality and Safety Features

RoHS3 compliant

Automotive-grade, AEC-Q101 qualified

Compatibility

Surface mount package: SOT-223 (TO-261)

Compatible with a wide range of electronic circuits and applications

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Switching circuits

Amplifiers

General-purpose electronics

Product Lifecycle

Current production part

Replacement and upgrade options available

Key Reasons to Choose This Product

Robust automotive-grade design for reliable operation

Wide operating temperature range for diverse applications

High voltage and current handling capabilities

Efficient performance with low saturation voltage

High-speed switching capabilities for fast-paced circuits

RoHS3 compliance for environmental friendliness

AEC-Q101 qualification for automotive-grade reliability