NSVMMUN2133LT1G - onsemi

Manufacturer Part Number

NSVMMUN2133LT1G

Manufacturer

onsemi

Introduction

This product is a pre-biased PNP bipolar junction transistor (BJT) in a small surface-mount package.

Product Features and Performance

Designed for low-voltage, low-power applications

Provides built-in base-emitter resistors for easy biasing

Operates at a maximum collector-emitter voltage of 50V

Supports a maximum collector current of 100mA

Exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V

Product Advantages

Pre-biased configuration simplifies circuit design

Small surface-mount package saves board space

Robust performance parameters suitable for low-power applications

Key Technical Parameters

Power Rating: 246mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

Base Resistor (R1): 4.7kΩ

Emitter-Base Resistor (R2): 47kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for a variety of low-power analog and digital circuits

Application Areas

Ideal for use in low-voltage, low-power applications such as:

- Switches

- Amplifiers

- Biasing circuits

- Logic gates

Product Lifecycle

This product is currently in production and available.

Several Key Reasons to Choose This Product

Pre-biased configuration simplifies circuit design

Small surface-mount package saves valuable board space

Robust performance parameters suitable for low-power applications

RoHS3 compliant for environmental compatibility

Widely applicable in various low-voltage, low-power circuits