NSVMMBT6429LT1G - onsemi

Manufacturer Part Number

NSVMMBT6429LT1G

Manufacturer

onsemi

Introduction

High-speed, high-gain NPN bipolar junction transistor (BJT)

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage (VCE(sat)) of 600 mV @ 5 mA, 100 mA

High DC current gain (hFE) of 500 min @ 100 μA, 5 V

High transition frequency (fT) of 700 MHz

Low collector cutoff current (ICBO) of 100 nA max

Product Advantages

Suitable for high-speed switching and amplification applications

Excellent thermal stability and reliability

Small form factor in SOT-23-3 (TO-236) package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 45 V max

Collector Current (IC): 200 mA max

Power Dissipation: 300 mW max

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for surface mount applications

Application Areas

High-speed switching circuits

Amplifiers

Logic gates

Drivers

Product Lifecycle

Currently available and not nearing discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

High-performance NPN BJT with excellent electrical characteristics

Suitable for a wide range of high-speed electronic applications

Small form factor and surface mount compatibility

Reliable operation over a wide temperature range

Compliant with RoHS3 environmental regulations