Manufacturer Part Number
NSVMMBT3906TT1G
Manufacturer
onsemi
Introduction
This is a PNP bipolar junction transistor (BJT) from onsemi's NSVMMBT3906 series. It is designed for use in automotive and other high-reliability applications.
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Low collector-emitter saturation voltage of 400mV @ 5mA, 50mA
High transition frequency of 250MHz
Collector current rating of 200mA
Power rating of 200mW
Product Advantages
Automotive-qualified to AEC-Q101 standard
RoHS3 compliant for environmentally-friendly use
Available in compact SC-75 and SOT-416 surface mount packages
Tape and reel packaging for efficient automated assembly
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 40V
DC Current Gain (hFE): min. 100 @ 10mA, 1V
Transition Frequency: 250MHz
Quality and Safety Features
Automotive-grade qualification to AEC-Q101 standard
RoHS3 compliant for restricted substances
Compatibility
This PNP bipolar transistor is compatible with a wide range of electronic circuits and systems, particularly in automotive and industrial applications.
Application Areas
Amplifiers
Switches
Voltage regulators
Automotive electronics
Industrial control systems
Product Lifecycle
The NSVMMBT3906TT1G is an active and widely available product. Onsemi continues to manufacture and support this device, and there are no plans for discontinuation in the near future.
Key Reasons to Choose This Product
Automotive-qualified performance and reliability
Wide operating temperature range of -55°C to 150°C
Low saturation voltage for efficient operation
High transition frequency for high-speed applications
Available in compact surface mount packages for space-constrained designs
Tape and reel packaging for automated assembly