NSVMMBT6520LT1G - onsemi

Manufacturer Part Number

NSVMMBT6520LT1G

Manufacturer

onsemi

Introduction

High-voltage PNP bipolar junction transistor (BJT) designed for automotive and industrial applications.

Product Features and Performance

Operates at high voltages up to 350V

High current capability up to 500mA

High frequency performance up to 200MHz

Low collector-emitter saturation voltage of 1V @ 5mA, 50mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust design for harsh automotive and industrial environments

Efficient power handling capabilities

Excellent high-frequency performance

Low power loss and heat generation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 350V

Collector Current (IC): 500mA

DC Current Gain (hFE): 20 min @ 50mA, 10V

Transition Frequency (fT): 200MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Suitable for Tape & Reel packaging

Compatibility

Surface mount package (SOT-23-3)

Suitable for common PCB assembly processes

Application Areas

Automotive electronics

Industrial power supplies

Motor control circuits

Switching regulators

Amplifiers

Product Lifecycle

Current product, no discontinuation planned

Replacement/upgrade parts available if needed

Key Reasons to Choose This Product

Reliable high-voltage and high-current performance

Rugged design for harsh environments

Efficient power handling for reduced heat generation

Excellent high-frequency capabilities

Automotive and industrial qualification for wide application coverage