NSVMMUN2112LT1G - onsemi

Manufacturer Part Number

NSVMMUN2112LT1G

Manufacturer

onsemi

Introduction

High-performance PNP pre-biased bipolar junction transistor (BJT) in a small-outline package.

Product Features and Performance

High current gain (hFE)

Low collector-emitter saturation voltage (VCE(sat))

Low collector-emitter cutoff current (ICEO)

Integrated base and emitter resistors

Surface-mount TO-236-3 (SOT-23-3) package

Product Advantages

Efficient operation

Space-saving design

Easy integration into circuit boards

Reliable and stable performance

Key Technical Parameters

Power rating: 246 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Base-emitter and base-collector resistors: 22 kΩ each

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Compatible with a wide range of electronic devices and circuits that require a pre-biased PNP bipolar transistor.

Application Areas

Amplifier and switching circuits

Voltage regulation and biasing

General-purpose electronics

Product Lifecycle

The NSVMMUN2112LT1G is an active and widely available product. Replacements and upgrades may be available from onsemi or authorized distributors.

Key Reasons to Choose This Product

High performance and efficiency

Small and space-saving package

Integrated resistors for easy integration

Reliable and robust construction

RoHS3 compliance for environmental sustainability