NSVMMUN2232LT1G - onsemi

Manufacturer Part Number

NSVMMUN2232LT1G

Manufacturer

onsemi

Introduction

Pre-biased NPN bipolar junction transistor

Designed for general-purpose switching and amplifying applications

Product Features and Performance

Collector-emitter breakdown voltage up to 50V

Collector current up to 100mA

Low collector-emitter saturation voltage

Integrated base and emitter resistors

Small SOT-23-3 surface mount package

Product Advantages

Simplified circuit design with pre-biased configuration

Compact size for space-constrained applications

Robust performance in switching and amplifying circuits

Key Technical Parameters

Power rating: 246mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Base-emitter and base-collector resistor values: 4.7kΩ

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package (SOT-23-3)

Compatibility

Suitable for general-purpose electronic circuit designs

Can be used in a variety of consumer, industrial, and communications applications

Application Areas

Switching circuits

Amplifying circuits

General-purpose electronic devices

Product Lifecycle

Currently in production

No plans for discontinuation announced

Replacement or upgrade options available if required

Key Reasons to Choose This Product

Simplified circuit design with integrated biasing resistors

Compact size and surface mount package for space-constrained layouts

Robust performance in switching and amplifying applications

Availability and ongoing support from the manufacturer (onsemi)