Manufacturer Part Number
NSVMMUN2232LT1G
Manufacturer
onsemi
Introduction
Pre-biased NPN bipolar junction transistor
Designed for general-purpose switching and amplifying applications
Product Features and Performance
Collector-emitter breakdown voltage up to 50V
Collector current up to 100mA
Low collector-emitter saturation voltage
Integrated base and emitter resistors
Small SOT-23-3 surface mount package
Product Advantages
Simplified circuit design with pre-biased configuration
Compact size for space-constrained applications
Robust performance in switching and amplifying circuits
Key Technical Parameters
Power rating: 246mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
Base-emitter and base-collector resistor values: 4.7kΩ
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (SOT-23-3)
Compatibility
Suitable for general-purpose electronic circuit designs
Can be used in a variety of consumer, industrial, and communications applications
Application Areas
Switching circuits
Amplifying circuits
General-purpose electronic devices
Product Lifecycle
Currently in production
No plans for discontinuation announced
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Simplified circuit design with integrated biasing resistors
Compact size and surface mount package for space-constrained layouts
Robust performance in switching and amplifying applications
Availability and ongoing support from the manufacturer (onsemi)