NSVMUN2212T1G - onsemi

Manufacturer Part Number

NSVMUN2212T1G

Manufacturer

onsemi

Introduction

NPN pre-biased transistor in a small surface-mount package

Product Features and Performance

Power rating of 230 mW

Collector-emitter breakdown voltage of 50 V

Collector current of up to 100 mA

Collector cut-off current of 500 nA

Saturation voltage of 250 mV at 10 mA collector current

DC current gain of minimum 60 at 5 mA collector current

Built-in 22 kOhm base and emitter-base resistors

Product Advantages

Pre-biased design for simplified circuit design

Small surface-mount package for compact applications

High performance and reliability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5 mA, 10 V

Resistor Base (R1): 22 kOhms

Resistor Emitter Base (R2): 22 kOhms

Quality and Safety Features

RoHS3 compliant

Reliable surface-mount package

Compatibility

Compatible with standard bipolar transistor applications

Application Areas

Suitable for various electronic circuits, including amplifiers, switches, and logic circuits

Product Lifecycle

Current product, no known discontinuation plans

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

High performance in a small surface-mount package

Reliable and RoHS-compliant

Broad compatibility with bipolar transistor applications