NSVMUN5132T1G - onsemi

Manufacturer Part Number

NSVMUN5132T1G

Manufacturer

onsemi

Introduction

High-performance pre-biased PNP bipolar junction transistor with integrated base and emitter resistors.

Product Features and Performance

Compact surface mount SC-70-3 (SOT323) package

Low collector-emitter saturation voltage

High current gain

Wide collector-emitter breakdown voltage

Low collector cutoff current

Integrated base and emitter resistors for ease of use

Product Advantages

Compact and space-saving design

Simplified circuit design with integrated resistors

Excellent electrical performance characteristics

Reliable and robust performance

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA

DC Current Gain: 15 @ 5 mA, 10 V

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

Amplifier and switching circuits

Biasing and driving circuits

General-purpose electronic applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact and space-saving design

Simplified circuit design with integrated resistors

Excellent electrical performance characteristics

Reliable and robust performance

RoHS3 compliance for environmental responsibility