NSVMMUN2212LT1G - onsemi

Manufacturer Part Number

NSVMMUN2212LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT)

Pre-Biased Single Transistor

Product Features and Performance

Integrated Base-Emitter Resistor

Low Collector-Emitter Saturation Voltage

High Collector Current Capability

Stable Current Gain

Product Advantages

Simplified Circuit Design

Improved Reliability

Reduced Power Dissipation

Key Technical Parameters

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cut-off Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV

Current Gain (hFE): 60 (min)

Base Resistor (R1): 22 kΩ

Emitter-Base Resistor (R2): 22 kΩ

Quality and Safety Features

RoHS3 Compliant

Reliable Surface Mount Package (SOT-23-3)

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic Gates

Pull-up/Pull-down Circuits

General Purpose Electronic Designs

Product Lifecycle

Currently in active production

Replacement or upgrade options available

Several Key Reasons to Choose This Product

Integrated pre-biasing for simplified circuit design

Stable and consistent performance characteristics

High reliability and low power dissipation

Wide range of applications in electronic circuits

Readily available in standard surface mount packaging