NSVMUN5111DW1T3G - onsemi

Manufacturer Part Number

NSVMUN5111DW1T3G

Manufacturer

onsemi

Introduction

Dual Pre-Biased PNP Transistor Array

Product Features and Performance

Dual PNP transistor array

Pre-biased transistors

High DC current gain (hFE)

Low collector-emitter saturation voltage (VCE(SAT))

Low collector-emitter cutoff current (ICEO)

Optimized for automotive and industrial applications

Suitable for switch, driver, and amplifier circuits

Product Advantages

Compact size and surface mount package

Improved reliability and consistency through pre-biasing

Reduced design complexity and component count

Enhanced thermal and electrical performance

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV @ 300µA, 10mA

DC current gain (hFE): 35 (min) @ 5mA, 10V

Base resistance (R1): 10kΩ

Emitter-base resistance (R2): 10kΩ

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Surface mount package: SC-88/SC70-6/SOT-363

Suitable for a variety of electronic circuits and systems

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Analog and digital signal processing

General-purpose amplifier and switching applications

Product Lifecycle

Current product offering

No immediate plans for discontinuation

Replacement or upgrade options available upon request

Key Reasons to Choose This Product

Optimized performance and reliability for automotive and industrial use

Compact surface mount package for space-constrained designs

Reduced design complexity and component count through pre-biased transistors

Excellent thermal and electrical characteristics to support a wide range of applications

AEC-Q101 qualification ensures quality and reliability for automotive use

Ongoing product support and availability of replacement or upgrade options