Manufacturer Part Number
NSVMUN5213DW1T3G
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Bipolar junction transistor (BJT) array with pre-biased resistors
Product Features and Performance
Two NPN pre-biased transistors in a single package
Transistor array design for space-saving applications
Optimized for automotive and industrial applications
Product Advantages
Integrated pre-biased resistors simplify circuit design
Compact 6-pin surface mount package
Meets AEC-Q101 automotive qualification requirements
Key Technical Parameters
Maximum power dissipation: 250mW
Maximum collector-emitter breakdown voltage: 50V
Maximum collector current: 100mA
Minimum DC current gain (hFE): 80 @ 5mA, 10V
Base resistor value: 47kΩ
Emitter-base resistor value: 47kΩ
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount package: SC-88/SC70-6/SOT-363
Tape and reel packaging
Application Areas
Automotive electronics
Industrial control systems
General-purpose switching and biasing circuits
Product Lifecycle
Current production
No known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Compact and space-saving design
Integrated pre-biased resistors for simplified circuit design
Automotive-qualified performance for reliability in harsh environments
Broad compatibility with standard surface mount packaging and reeling options