Manufacturer Part Number
NSVMUN5237T1G
Manufacturer
onsemi
Introduction
Single, Pre-Biased NPN Bipolar Junction Transistor (BJT) for Automotive Applications
Product Features and Performance
Optimized for automotive applications
Pre-biased for improved switching performance
Low collector-emitter saturation voltage
Low collector cutoff current
Wide collector-emitter breakdown voltage
Product Advantages
Reliable performance in harsh automotive environments
Enhanced switching characteristics for efficient circuit operation
Reduced power dissipation and heat generation
Robust design for long-term reliability
Key Technical Parameters
Power Dissipation: 202 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
DC Current Gain (hFE): 80 (min)
Base Resistor (R1): 47 kΩ
Emitter-Base Resistor (R2): 22 kΩ
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable surface mount package (SC-70, SOT-323)
Compatibility
Suitable for use in a variety of automotive electronic systems
Application Areas
Automotive electronics
Power management circuits
Switching and amplification circuits
General-purpose electronic applications
Product Lifecycle
This product is currently in production and available for purchase
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Optimized for reliable performance in harsh automotive environments
Enhanced switching characteristics for efficient circuit operation
Low power dissipation and heat generation
Robust design for long-term reliability
AEC-Q101 qualification for automotive applications
Availability in a compact surface mount package (SC-70, SOT-323)