NSVMUN5237T1G - onsemi

Manufacturer Part Number

NSVMUN5237T1G

Manufacturer

onsemi

Introduction

Single, Pre-Biased NPN Bipolar Junction Transistor (BJT) for Automotive Applications

Product Features and Performance

Optimized for automotive applications

Pre-biased for improved switching performance

Low collector-emitter saturation voltage

Low collector cutoff current

Wide collector-emitter breakdown voltage

Product Advantages

Reliable performance in harsh automotive environments

Enhanced switching characteristics for efficient circuit operation

Reduced power dissipation and heat generation

Robust design for long-term reliability

Key Technical Parameters

Power Dissipation: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

DC Current Gain (hFE): 80 (min)

Base Resistor (R1): 47 kΩ

Emitter-Base Resistor (R2): 22 kΩ

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Reliable surface mount package (SC-70, SOT-323)

Compatibility

Suitable for use in a variety of automotive electronic systems

Application Areas

Automotive electronics

Power management circuits

Switching and amplification circuits

General-purpose electronic applications

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Optimized for reliable performance in harsh automotive environments

Enhanced switching characteristics for efficient circuit operation

Low power dissipation and heat generation

Robust design for long-term reliability

AEC-Q101 qualification for automotive applications

Availability in a compact surface mount package (SC-70, SOT-323)